Material properties has been an essential factor in nano-scale device applications and device physics, and it is an appealing idea to identify the proper material types corresponding to specific device applications. Currently, the compelling demand for high performance and low power consumption electronic device have been driving the industry’s quest to improve device architectures. Besides, novel nano-scale device design are also proposed to address the device challenges, including spintronics, optoelectronics and valleytronics applications. In order to cope with these demands, novel material types are proposed to be implemented in these new designs. For instance, two-dimensional materials (2-D materials) have attracted research attention ever since the discovery of graphene, a gapless material possesses outstanding carrier mobility and room-temperature quantum hall effect (QHE). Beyond graphene, other materials two-dimensional counterparts with band gap are discovered and isolated, such as the black phosphorus (BP), transition metal dichalcogenides (TMD) materials, and other 2-D group IV materials, etc. And these materials as well, are considered not only as the candidate for channel material in field-effect transistors applications, but also for optoelectronics and valleytronics devices, due to their amazing electronic and mechanical properties in its 2D geometric structure. As these new materials have been discovered and fabricated within the recent years, they have shed light on those challenges encountered by the industry. And hence, a fantastic research opportunity could be found in investigating how material properties would affect the device performance and its physics, and characterized the optimized device performance from the aspect of carrier transport in certain material selections.