Publication
Journal Articles 2023-2022-2021-2020-2019-2018-2017-2016-2015-2014-2013-2012-2011-2010-2009-2008-2007- 2006 & before
Conference Proceedings / Talks 2023-2022-2021-2020-2019-2018-2017-2016-2015-2014-2013-2012-2011-2010-2009-2008-2007-2006 & before
Books/Book Chapters
*Indicating work supervised under Prof.Liang
2023
124*. Many-Body Effects-Based Invertible Logic with a Simple Energy Landscape and High Accuracy*
Y He, C Fang, S Luo, G Liang*
123*. Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Probabilistic Computing*
Sheng Luo, Yihan He, Baofang Cai, Xiao Gong, Gengchiau Liang*
122*. Unconventional computing based on magnetic tunnel junction
Baofang Cai, Yihan He, Yue Xin, Zhengping Yuan, Xue Zhang, Zhifeng Zhu, Gengchiau Liang*
121.Unconventional resistivity scaling in topological semimetal CoSi
Shang-Wei Lien, Ion Garate, Utkarsh Bajpai, Cheng-Yi Huang, Chuang-Han Hsu, Yi-Hsin Tu, Nicholas A Lanzillo, Arun Bansil, Tay-Rong Chang, Gengchiau Liang, Hsin Lin, Ching-Tzu Chen
2022
120. Spatially nonuniform oscillations in ferrimagnets based on an atomistic model
Xue Zhang, Baofang Cai, Jie Ren, Zhengping Yuan, Zhengde Xu, Yumeng Yang, Gengchiau Liang, Zhifeng Zhu
2021
119. Time-Dependent Landau-Ginzburg Equation-Based Ferroelectric Tunnel Junction Modeling With Dynamic Response and Multi-Domain Characteristics
Zuopu Zhou, Leming Jiao, Jiuren Zhou, Qiwen Kong, Sheng Luo, Chen Sun, Zijie Zheng, Xiaolin Wang, Dong Zhang, Gan Liu, Gengchiau Liang, Xiao Gong
118. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
Xiu Fang Lu, Yishu Zhang, Naizhou Wang, Sheng Luo, Kunling Peng, Lin Wang, Hao Chen, Wei-Bo Gao2, Xian Hui Chen, Yang Bao, Gengchiau Liang, Kian Ping Loh
Nano Letters 21 (20), 8800-8807
117. Observation of the Out‐of‐Plane Polarized Spin Current from CVD Grown WTe2
Shuyuan Shi, Jie Li, Chuang‐Han Hsu, Kyusup Lee, Yi Wang, Li Yang, Junyong Wang, Qisheng Wang, Hao Wu, Wenfeng Zhang, Goki Eda, Gengchiau Liang, Haixin Chang, Hyunsoo Yang
116. Ge0.95Sn0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
Yuye Kang, Shengqiang Xu, Kaizhen Han, Eugene Y-J Kong, Zhigang Song, Sheng Luo, Annie Kumar, Chengkuan Wang, Weijun Fan, Gengchiau Liang, Xiao Gong
115. Organic tandem solar cells with Janus-engineered interconnecting layer
Cheng-Yu Chi, Hsiang-Ting Lien, Jhih-Wei Chen, Chia-Hao Chen, Chih-Chien Chu, Geng-Chiau Liang, Michael Zharnikov, Yian Tai
114. Room-temperature nonlinear Hall effect and wireless radiofrequency rectification in Weyl semimetal TaIrTe4
Dushyant Kumar, Chuang-Han Hsu, RaghavSharma, Tay-Rong Chang, Peng Yu, Junyong Wang, Goki Eda, Gengchiau Liang, Hyunsoo Yang
2020
113. High Oscillator Strength Interlayer Excitons in 2D Heterostructures for Mid- IR Photodetection
Steven Lukman , Lu Ding , Lei Xu , Ye Tao , Anders C. Riis-Jensen , Gang Zhang , Qingyang, Steve Wu , Ming Yang , Sheng Luo , Chuanghan Hsu , Liangzi Yao , Gengchiau Liang , Hsin Lin , Yong-Wei Zhang , Kristian S. Thygesen , Qi Jie Wang , Yuanping Feng , Jinghua Teng
112*. Performance Evaluation and Device Physics Investigation of Negative-Capacitance MOSFETs Based on Ultrathin Body Silicon and Monolayer MoS2
Sheng Luo, Xiaoyi Zhang, Gengchiau Liang
111*. Voltage-Controlled Spintronic Stochastic Neuron for Restricted Boltzmann Machine with Weight Sparsity
Jiefang Deng, Venkata Pavan Kumar Miriyala, Zhifeng Zhu, Xuanyao Fong, Gengchiau Liang
110*. Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets
Z Zhu, K Cai, J Deng, VPK Miriyala, H Yang, X Fong, Gengchiau Liang
109. Role of carrier-transfer in the optical nonlinearity of graphene/Bi2Te3 heterojunctions
Lan, Jia-chi; Qiao, Junpeng; Sung, Wei-Heng; Chen, Chun-Hu; Jhang, Ren-Huai; Lin, Shi-Hsin; Liang, Gengchiau; Wu, Meng-Yu; Tu, Li-Wei; Cheng, Chang-Maw; Liu, Hong; Lee, Chao-Kuei
108. Ultrafast and energy-efficient spin–orbit torque switching in compensated ferrimagnets
Cai, Kaiming, Zhifeng Zhu, Jong Min Lee, Rahul Mishra, Lizhu Ren, Shawn D. Pollard, Pan He, Gengchiau Liang, Kie Leong Teo, and Hyunsoo Yang
2019
107. All-electric magnetization switching and Dzyaloshinskii–Moriya interaction in WTe 2/ferromagnet heterostructures
Shi, Shuyuan, Shiheng Liang, Zhifeng Zhu, Kaiming Cai, Shawn D. Pollard, Yi Wang, Junyong Wang et al
106. Field-Free Switching of Perpendicular Magnetization Through Spin Hall and Anomalous Hall Effects in Ferromagnet–Heavy-Metal–Ferromagnet Structures
Sun, Chi, Jiefang Deng, S. M. Rafi-Ul-Islam, Gengchiau Liang, Hyunsoo Yang, and Mansoor BA Jalil
105*. A Compact Model for 2-D Poly-MoS 2 FETs With Resistive Switching in Postsynaptic Simulation
Wang, Lingfei, Lin Wang, Kah-Wee Ang, Aaron Voon-Yew Thean, and Gengchiau Liang
104. Spin-wave mediated interactions for Majority Computation using Skyrmions and Spin-torque Nano-oscillators
Miriyala, Venkata Pavan Kumar, Zhifeng Zhu, Gengchiau Liang, and Xuanyao Fong
103*. A statistical Seebeck coefficient model based on percolation theory in two-dimensional disordered systems
Wang, Lingfei, Aaron Voon-Yew Thean, and Gengchiau Liang
102*. Voltage-input spintronic oscillator based on competing effect for extended oscillation regions
Zhu, Zhifeng, Jiefang Deng, Xuanyao Fong, and Gengchiau Liang
101. Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion
Ismail Can Yesilyurt, Siu Zhuo Bin, Yang Shengyuan, Seng Ghee Tan, Gengchiau Liang, and Mansoor Bin Abdul Jalil
100*. Analysis on Performance of Ferroelectric NC-FETs Based on Real-Space Gibbs-Free Energy With Atomic Channel Structure
Zhang, Xiaoyi, Xiao Gong, and Gengchiau Liang
99*. Influence of Size and Shape on the Performance of VCMA-based MTJs
Venkata Pavan Kumar Miriyala, Xuanyao Fong, and Gengchiau Liang
2018
98*. Damping-like spin-orbit-torque-induced magnetization dynamics in ferrimagnets based on Landau-Lifshitz-Bloch equation
Zhifeng Zhu, Xuanyao Fong, and Gengchiau Liang
97. Inherent orbital spin textures in Rashba effect and their implications in spin-orbitronics
Ming-Chien Hsu, Liang-Zi Yao, Seng Ghee Tan, Gengchiau Liang, Mansoor B. A. Jalil
96*. A Surface Potential based Compact Model for 2D-FETs with Disorders Induced Transition Behaviors
Lingfei Wang, Yang Li, Xuewei Feng, Kah-Wee Ang, Xiao Gong, Aaron Voon-Yew Thean, Gengchiau Liang
95*. Effects of Scalability and Floating Metal on NC-FETs Based on Real-Space Atomic Model
Xiaoyi Zhang, Xiao Gong, Gengchiau Liang
94*. Percolation theory based statistical resistance model for resistive random access memory
Lingfei Wang, Aaron Theam, Gengchiau Liang
93*. Electric-field-induced three-terminal pMTJ switching in the absence of an external magnetic field
Jiefang Deng, Xuanyao Fong, Gengchiau Liang
92*. Theoretical Proposal for Determining Angular Momentum Compensation in Ferrimagnetic Layer
Zhifeng Zhu, Xuanyao Fong, Gengchiau Liang
91*. A Physics-Based Compact Model for Transition-Metal Dichalcogenides Transistors With the Band-Tail Effect
Wang, Lingfei, Yang Li, Xiao Gong, Aaron Voon-Yew Thean, and Gengchiau Liang
2017
90. Ultra-low specific contact resistivity (1.4× 10−9 Ω· cm2) for metal contacts on in-situ Ga-doped Ge0. 95Sn0. 05 film
Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, G Liang, X Gong, YC Yeo
89*. Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ
Deng Jiefang, Gaurav Gupta, Gengchiau Liang
88. Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion
C Yesilyurt, ZB Siu, SG Tan, G Liang, SA Yang, MBA Jalil
87. Floating-Base Germanium-Tin Heterojunction Phototransistor for High-Efficiency Photodetection in Short-Wave Infrared Range
Wei Wang, Yuan Dong, Shuh-Ying Lee, Wan-Khai Loke, Dian Lei, Soon-Fatt Yoon, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo
86. Single Atomically-Sharp Lateral Monolayer p-n Heterojunction Solar Cells with Extraordinarily High Power Conversion Efficiency
Meng-Lin Tsai, Ming-Yang Li, José Ramón Durán Retamal, Kai-Tak Lam, Yung-Chang Lin, Kazu Suenaga, Lih-Juann Chen*, Gengchiau Liang, Lain-Jong Li and Jr-Hau He
85. Monolithic integration of InGaAs n-FETs and lasers on Ge substrate
Annie Kumar, Shuh-Ying Lee, Sachin Yadav, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Daosheng Li, Saeid Masudy Panah, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, Dimitri Antoniadis, and Yee-Chia Yeo
84*. Wave Function Parity Loss Used to Mitigate Thermal Broadening in Spin-orbit Coupled Zigzag Graphene Analogues
Mohammad Abdullah Sadi, Gengchiau Liang
83. Monolithic Integration of InAs Quantum-Well n-MOSFETs and Ultrathin Body Ge p-MOSFETs on a Si Substrate
Sachin Yadav, Kian Hua Tan, Annie Kumar, Kian Hui Goh, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, Yee-Chia Yeo
82*. Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET
Sheng Luo, Kai-Tak Lam, Baokai Wang, Chuang-Han Hsu, Wen Huang, Liang-Zi Yao, Arun Bansil, Hsin Lin, Gengchiau Liang
81*. Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential
Xiaoyi Zhang, Kai-Tak Lam, Kain Lu Low, Yee-Chia Yeo, Gengchiau Liang
2016
80. Klein tunneling in Weyl semimetals under the influence of magnetic field
Yesilyurt Can, Seng Ghee Tan, Gengchiau Liang, and Mansoor BA Jalil
79. Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength
Dong, Yuan; Wang, Wei; Lee, S; Lei, Dian; Gong, Xiao; Loke, Wan; Yoon, Soon; Liang, Gengchiau; Yeo, Yee-Chia
78. Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
Lei Dian, Wei Wang, Zheng Zhang, Jisheng Pan, Xiao Gong, Gengchiau Liang, Eng-Soon Tok, and Yee-Chia Yeo
77. Enabling Hetero-integration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique
Xiao Gong, Sachin Yadav, Kian Hui Goh, Kian Hua Tan, Annie, Kian Lu Low, Bowen Jia, Soon-Fatt Yoon, Gengchiau Liang, and Yee-Chia Yeo
76. High-quality tensile strained Ge1-xSnx formed on a relaxed InyGa1-yP buffer layer
Wei Wang, Wan Khai Loke, Tingting Yin, Vijay Richard D’Costa, Qian Zhou, Yuan Dong, Eng Soon Tok, Gengchiau Liang, Zexiang Shen, Soon Fatt Yoon, and Yee-Chia Yeo
75. Perfect valley filter in strained graphene with single barrier region
C Yesilyurt, SG Tan, G Liang, M Jalil
74. Gate-all-around In 0.53 Ga 0.47 As junctionless nanowire FET with tapered source/drain structure
Kian-Hui Goh, Sachin Yadav, Kain Lu Low, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo
73*. Ultimate performance projection of ultrathin body transistor based on group IV, III-V, and 2-D-materials
Kain Lu Low, Yee-Chia Yeo, Gengchiau Liang
2015
72. Etching of germanium-tin using ammonia peroxide mixture
Yuan Dong, Bin Leong Ong, Wei Wang, Zheng Zhang, Jisheng Pan, Xiao Gong, Eng-Soon Tok, Gengchiau Liang, and Yee-Chia Yeo
71. Efficient Dual Spin-Valley Filter In Strained Silicene
C Yesilyurt, SG Tan, G Liang, M Jalil
70*. Anti-Damping Torque Engineering in Trilayer Spin-Hall System
Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang
69. Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Yuan Dong, Wei Wang, Dian Lei, Xiao Gong, Qian Zhou, Shuh Ying Lee, Wan Khai Loke, Soon-Fatt Yoon, Eng Soon Tok, Gengchiau Liang, Yee-Chia Yeo
68*. Carrier Transport in Bi2Se3 Topological Insulator Slab
Gaurav Gupta, Hsin Lin, Arun Bansil, Mansoor Bin Abdul Jalil and Gengchiau Liang
67*. Contact Effects in thin 3D-Topological Insulators: How does the current flow?
Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang
66*. Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double-Gate Ultrathin-Body Transistor
Yan Guo, Xiaoyi Zhang, Kain Lu Low, Kai-Tak Lam, Yee-Chia Yeo and Gengchiau Liang
65. Germanium-Tin on Si Avalanche Photodiode: Device Design and Technology Demonstration
Yuan Dong, Wei Wang, Xin Xu, Xiao Gong, Dian Lei, Qian Zhou, Zhe Xu, Soon-Fatt Yoon, Gengchiau Liang, and Yee-Chia Yeo
2014
64*. Evaluation of mobility in thin Bi2Se3 Topological Insulator for prospects of Local Electrical Interconnects
Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang
63*. Effect of phase transition on quantum transport in group-IV two-dimensional U-shape device
Mohammad Abdullah Sadi, Gaurav Gupta and Gengchiau Liang (MAS and GG contributed equally)
62*. Effect of Band-Alignment Operation on Carrier Transport in Bi2Se3 Topological Insulator
Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang
61*. Role of acoustic phonons in Bi2Se3 topological insulator slabs: A quantum transport investigation
Gaurav Gupta, Hsin Lin, Arun Bansil, Mansoor Bin Abdul Jalil and Gengchiau Liang
60*. Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2
Wen Huang, Xin Luo, Chee Kwan Gan, Su Ying Quek, and Gengchiau Liang (WH and XL contributed equally)
59*. Ballistic Performance of Hydrogenated Silicene and Germanene Field-Effect Transistors
Kain Lu Low, Wen Huang, Yee-Chia Yeo, and Gengchiau Liang
58*. Y-shape spin-separator for two-dimensional group-IV nanoribbons based on quantum spin hall effect
Gaurav Gupta, Hsin Lin, Arun Bansil, Mansoor Bin Abdul Jalil, Cheng-Yi Huang, Wei-Feng Tsai, and Gengchiau Liang
2013
57*. Thermoelectric performance of MX2 (M=Mo,W; X=S,Se) monolayers
Wen Huang, Haixia Da, and Gengchiau Liang
56*. Spin Dependent Thermoelectric Effects in Graphene-based Spin Valves
Minggang Zeng, Wen Huang, and Gengchiau Liang
2012
55*. Spin Filtering and Spin Separating Effects in U-shaped Topological Insulator Devices
Minggang Zeng and Gengchiau Liang
54*. Computational Study of Electro-Optic Effect based Graphene Transistors
Gaurav Gupta , Mansoor Bin Abdul Jalil , Bin Yu and Gengchiau Liang
53*. Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistors
Haixia Da, Kai-Tak Lam, Ganesh S. Samudra, Sai-Kong Chin, and Gengchiau Liang
52*. Graphene Nanoribbon Tunneling Field-Effect Transistors with Semiconductor and MetalHeterojunction Channel
Haixia Da, K.-T. Lam, Ganesh S. Samudra, S. K. Chin, and GengchiauLiang
51. Quantum Transport Simulations of Graphene Nanoribbon Devices usingDirac Equation Calibrated with Tight-binding pi-bond model
Sai-Kong Chin, Kai-Tak Lam, Dawei Seah, and GengchiauLiang
50*. The effects of interlayer mismatch on electronic properties of bilayer armchair graphene nanoribbons
You Qian, Kai-Tak Lam, Chengkuo Lee, Gengchiau Liang
2011
49*. Transition-Metal-Atom-Embedded Graphane and its Spintronic Device Applications
Haixia Da, Yuan Ping Feng and Gengchiau Liang
48*. Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator
E. Causing, and Gengchiau Liang
47*. Thermally induced currents in graphene-based heterostructure
Minggang Zeng, Yuanping Feng, and Gengchiau Liang
46*. High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects
Gengchiau Liang, S. Bala Kumar, M. B. A. Jalil, and S. G. Tan
45*. Design evaluation of graphene nanoribbon nanoelectromechanical devices
Kai-Tak Lam, Marie Stephen Leo, Chengkuo Lee and Gengchiau Liang
44*. Theoretical study on thermoelectric properties of kinked graphene nanoribbons
Wen Huang, Jian-Sheng Wang, and Gengchiau Liang
43*. Enhanced Faraday rotation in magnetophotonic crystal infiltrated with graphene
Haixia Da and Gengchiau Liang
42*. Conductance modulation in graphene nanoribbon under transversal asymmetric electric potential Electric field modulated electronic transport in hollowed graphene nanoribbons
S. Bala Kumar, F. Fujita, and Gengchiau Liang
41*. Electrostatics of Ultimately-Thin Body Tunneling FET using Graphene Nanoribbon
Kai-Tak Lam, Yue Yang, G. S. Samudra, Yee-Chia Yeo and Gengchiau Liang
40*. Graphene-based Spin Caloritronics
Minggang Zeng, Yuan Ping Feng, and Gengchiau Liang
39*. Stability and electronic structure of two dimensional Cx(BN)y compound
Kai-Tak Lam, Yunhao Lu, Yuan Ping Feng, and Gengchiau Liang
2010
38. Ambipolar bistable switching effect of graphene
Young Jun Shin, Jae Hyun Kwon, Gopinadhan Kalon, Kai-Tak Lam, Charanjit Singh Bhatia, Gengchiau Liang, and Hyunsoo Yang
37. Tunneling characteristics of graphene
Young Jun Shin, Gopinadhan Kalon, Jaesung Son, Jae Hyun Kwon, Jing Niu, Charanjit Singh Bhatia, Gengchiau Liang, and Hyunsoo Yang
36*. Device Physics and Characteristics of Ballistic Graphene Nanoribbon Tunneling FETs
S.-K. Chin, D. W. Seah, K.-T. Lam, G. S. Samudra, and G. C. Liang
35*. Theoretical study on thermoelectric properties of Ge nanowires based on electronic band structures
W. Huang, S. K. Chee, and G. C. Liang
34*. The effect of magnetic field and disorders on the electronic transport in graphene nanoribbons
S. B. Kuma, M. B. A. Jalil, S. G. Tan, and G. C. Liang
33*. Magnetoresistive effect in graphene nanoribbon due to magnetic field induced band gap modulation
S. B. Kuma, S. G. Tan, M. B. A. Jalil, and G. C. Liang
32*. A Simulation Study of Graphene Nanoribbon Tunneling FET with Heterojunction Channel
K.-T. Lam, D. W. Seah, S.-K. Chin, S. B. Kumar, G. Samudra, Y.-C. Yeo, and G. C. Liang
31*. Influence of edge roughness on graphene nanoribbon resonant tunneling diodes
G. C. Liang, S. B. Khalid, and K.-T. Lam
30*. Shape Effects on the Performance of Si and Ge Nanowire FETs based on Size Dependent Bandstructure
S. K. Chee , G. Samudra, and G. C. Liang
29*. Effect of Ribbon Width and Doping Concentration on Device Performance of Graphene Nanoribbon Tunneling Field-Effect Transistors
K.-T. Lam, S.-K. Chin, D. W. Seah, S. B. Kumar, and G. C. Liang
28*. Geometry effects on thermoelectric properties of silicon nanowires based on electronic band structures
G. C.Liang, W. Huang, S. K. Chee, J.-S. Wang,
and J. H. Lan
2009
27. Disorder enhances thermoelectric figure of merit in armchair graphane nanoribbons
X. X. Ni, G. C. Liang, J.-S. Wang, and B. W. Li
26*. Bilayer Graphene Nanoribbon Nanoelectromechanical System Devices: a Computational Study
K.-T. Lam, C. K. Lee and G. C. Liang
25. High and Tunable Spin Current Induced by Magnetic-Electric Fields in a Single-Mode Spintronic Device
S. B. Kumar, S. G. Tan, M. B. A. Jalil, and G. C. Liang
24*. Shape effects in graphene nanoribbon resonant tunneling diodes: A computational study
H. Teong, K.-T. Lam, S. B. Khalid, and G. C. Liang
23*. A computational study on the device performance of graphene nanoribbon resonant tunneling diodes
H. Teong, K.-T. Lam, and G. C. Liang
2008
22. Temperature Dependence of Carrier Transport of a Silicon Nanowire Schottky-Barrier Field-Effect Transistor
W. F. Yang, S. J. Lee, G. C. Liang, R. Eswar, Z. Q. Sun, and D. L. Kwong
21. Improved Carrier Injection in Gate-All-Around Schottky Barrier Silicon Nanowire Field Effect
J. W. Peng, S. J. Lee, G. C. Liang, N. Singh, S. Y. Zhu, C. M. Ng, G. Q. Lo, N. Balasubramanian, and D. L. Kwong
20*. Contact Effects in Graphene Nanoribbon Transistors
G. C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov
19*. An Ab Initio Study on Energy Gap of Bilayer Graphene Nanoribbons with Armchair Edges
K.-T. Lam and G. C. Liang
18. Electrical Transport of Bottom-Up Grown Single-Crystal Si1-xGex Nanowire
W. F. Yang, S. J. Lee, G. C. Liang, S. J. Whang, and D. L. Kwong
17. A pseudopotential method for investigating the surface roughness effect in ultrathin body transistors
Z.-G. Zhu, G. C. Liang, and G. S. Samudra
16*. Computational study of double-gate graphene nano-ribbon transistors
G. C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov
15. Spin tunneling in multilayer spintronic devices
S. G. Tan, M. B. A. Jalil, S. B. Kumar, and G. C. Liang
14. Sub-100 Nanometer Channel Length Ge/Si Nanowire Transistors with Potential for 2 THz Switching Speed
Y. J. Hu, J. Xiang, G. C. Liang, H. Yan,and C. M. Lieber
2007
13*. Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation
G. C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov
12*. Performance projections for ballistic graphene nanoribbon field-effect transistors
G. C. Liang, N. Neophytos, D. Nikonov, and M. Lundstrom
11*. Impact of structure relaxation on the ultimate performance of a small diameter, n-type <110> Si-Nanowire MOSFET
G. C. Liang, D. Kienle, S. K. R. Patil, J. Wang, A. W. Ghosh, and S. V. Khare
10*. Performance Analysis of a Ge/Si Core/Shell Nanowire Field Effect Transistor
G. C. Liang, J. Xiang, N. Kharche, G. Klimeck, C. M. Lieber, and M. Lundstrom
2006 & before
9. Extended Hückel theory for band structure, chemistry, and transport. II. Silicon
D. Kienle, K. H. Bevan, G. C. Liang, L. Siddiqui, J. I. Cerda, and A. W. Ghosh
8. Molecules on Silicon: Self-Consistent First-Principles Theory and Calibration to Experiments
T. Rakshit, G. C. Liang, A. W. Ghosh, and S. Datta
7. Identifying contact effects in electronic conduction through C60 on Silicon
G. C. Liang, and A. W.Ghosh
6. Modeling Challenges in Molecular Electronics on Silicon
T. Rakshit, G. C. Liang, A. W. Ghosh, and S. Datta
5. Silicon-based molecular electronics
T. Rakshit, G. C. Liang, A. W. Ghosh, and S. Datta
4. Electrostatic potential profiles of molecular conductors
G. C. Liang, A. W. Ghosh, M. Paulsson, and S. Datta
3. Photoacoustic measurement of methane concentrations with a compact pulsed optical parametric oscillator
A. Miklos, C. H. Lim, W. W. Hsiang, G. C. Liang, A. H. Kung, A. Schmohl, and P. Hess
2. Photoacoustic Trace Detection of Methane Using Compact Solid-State Lasers
G. C. Liang, H.-H. Liu, A. H. Kung, A. Mohacsi, A. Miklos, and P. Hess
1. Multi-band Quantum Transmitting Boundary Method for Non-orthogonal Basis
G. C. Liang, Y. A. Lin, D. Z.Y. Ting, and Y. -C. Chang
Conference Proceedings / Talks
2023
102. Leming Jiao†, Zuopu Zhou†, Zijie Zheng, Kaizhen Han, Qiwen Kong, Xiaolin Wang, Haiwen Xu, Jishen Zhang, Chen Sun, Yuye Kang, Gengchiau Liang, and Xiao Gong*, “First BEOL-compatible IGZO Ferroelectic-Modulated Diode with Drastically Enhanced Memory Window: Experiment, Modeling, and Deep Understanding” IEDM 2023.
101. Gan Liu, Qiwen Kong, Xiaolin Wang, Yi-Hsin Tu, Zijie Zheng, Chen Sun, Dong Zhang, Yuye Kang,Kaizhen Han, Gengchiau Liang, and Xiao Gong, “Unveiling the Influence of Channel Thickness on PBTI and LFN in Sub-10 nm-thick IGZO FETs: A Holistic Perspective for Advancing Oxide Semiconductor Devices” IEDM 2023
100. Yi-Hsin Tu*, Sheng Luo, and Gengchiau Liang*, “Performance and Device Physics Evaluation of Ultra-thin Body BAs Transistors based on Quantum Transport and Wannier-type Tight-Binding Simulations,” SSDM 2023, 2023 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, September 5-8, 2023, Nagoya Congress Center, Nagoya, Japan.
99. Sheng Luo*, Yihan He, Baofang Cai, Xiao Gong, and Gengchiau Liang*, “A Probabilistic-Bits Design based on Stochastic Ferroelectric Field-Effect Transistors,” SSDM 2023, 2023 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, September 5-8, 2023, Nagoya Congress Center, Nagoya, Japan.
98. Baofang Cai1δ, Xue Zhang2, Zhifeng Zhu2, Gengchiau Liang1*, “Atomistic Modelling of Spatially Resolved Oscillation Dynamics in Ferrimagnetic Spin Chain” SSDM 2023, 2023 INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, September 5-8, 2023, Nagoya Congress Center, Nagoya, Japan.
97. Yihan He, Chao Fang, Sheng Luo, Gengchiau Liang, “Logically Synthesized Invertible Logic Based on Many-body Effects with Probabilistic-bit Implementation,” 2023 Silicon Nanoelectronics Workshop (SNW), Rihga Royal Hotel Kyoto, Japan, June 10, 2023.
96. Gerui Zheng, Yuxuan Wang, Haiwen Xu, Rami Khazaka, Lutz Muehlenbein, Sheng Luo, Xuanqi Chen, Rui Shao, Zijie Zheng, Gengchiau Liang, Xiao Gong, “Record High Active Boron Doping using Low Temperature In-situ CVD: Enabling Sub-5×10−10 Ω-cm2 ρc from Cryogenic (5 K) to Room Temperature,” 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Rihga Royal Hotel Kyoto, Japan, June 11-16, 2023.
95. Yihan He, Chao Fang, Sheng Luo, Gengchiau Liang, “A High-energy-difference Design for Boltzmann Machine-based Invertible Logic,” The 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), April 18-21, 2022, Hsinchu, Taiwan.
94. Sheng Luo, Yihan He, Baofang Cai, Xiao Gong and Gengchiau Liang. “Ferroelectric Probabilistic Bits Based on Thermal Noise Induced Randomness for Stochastic Computing,” IEEE EDTM 2023, 7th IEEE Electron Devices Technology and Manufacturing, Seoul, Korea, Marc 7th-10th, 2023.
93. Ching-Tzu Chen, Christian Lavoie, Nicholas Lanzillo, Utkarsh Bajpai, Oki Gunawan, Asir Intisar Khan, Guy Cohen, Teodor Todorov, John Bruley, Vesna Stanic, Hsin Lin, Ion Garate, Shang-Wei Lien, Yi-Hsin Tu, Gengchiau Liang, Cheng-Yi Huang, Arun Bansil, Sushant Kumar, Ravishankar Sundararaman, Jean Jordan-Sweet, Peter Kerns, Nathan Marchack, Tay-Rong Chang,” Exploring Unconventional Resistivity Scaling in Topological Semimetals for Interconnects Beyond Copper,” APS March Meeting 2023 Las Vegas, Nevada March 5-10, 2023.
2022
92. Sushant Kumar, Yi-Hsin Tu, Sheng Luo, Nick Lanzillo, Tay-Rong Chang, Ravishankar Sundararaman, Hsin Lin, Gengchiau Liang, Ching-Tzu Chen, “Evaluating the Potential of Weyl Semimetals as Future Interconnect Metals,” Materials Research Society (MRS) Spring Meeting, Honolulu, Hawaii, May 23-25, 2022.
91. Cai, Baofang; Zhang, Xue; Zhu, Zhifeng; Liang, Gengchiau, “Theoretical Investigation of Tunable Ferrimagnetic Spin-Chain Oscillation Based on Atomistic Spin Model Simulation,” MMM 2022, Minneapolis, MN, Oct. 31 to Nov. 4, 2022.
90. Xue Zhang, Baofang Cai, Ren Jie, Zhengping Yuan, Yumeng Yang, Gengchiau Liang, Zhifeng Zhu, “THz Ferrimagnetic Oscillation Based on the Atomistic Model,” International Conference on Solid State Devices and Materials SSDM 2022, Makuhari Messe International Conference Hall Chiba‐city, Sep. 22-26, 2022.
89.Hsin Lin, Shang-Wei Lien, Ion Garate, Cheng-Yi Huang, Utkarsh Bajpai, Chuang-Han Hsu, Yi-Hsin Tu, Tay-Rong Chang, Nicholas Lanzillo, Gengchiau Liang, Arun Bansil, Ching-Tzu Chen, “Resistivity scaling in topological semimetal CoSi.” APS March Meeting, Chicago IL March 14-16, 2022.
2021
88. Sun, Xianglie, Jun Luo, Yaodong Liu, Jing Xu, Jianfeng Gao, Jinbiao Liu, Xuebing Zhou et al. "A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity." IEEE Transactions on Electron Devices 70, no. 1 (2022): 209-214.
2020
87. S. Luo, X. Zhang and G. Liang, "A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS2," 2020 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 2020, pp. 71-72.
86. Ming-Hung Wu , Ming-Shun Huang , Zhifeng Zhu , Fu-Xiang Liang , Ming-Chun Hong , Jiefang Deng , Jeng-Hua Wei , Shyh-Shyuan Sheu , Chih-I Wu , Gengchiau Liang and Tuo-Hung Hou, “Compact Probabilistic Poisson Neuron based on Back-Hopping Oscillation in STT-MRAM for All-Spin Deep Spiking Neural Network,” 2020 VLSI, June 14-19, 2020.
2019
85. Sheng Luo, Xiaoyi Zhang, Gengchiau Liang, " A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultrathin Body Silicon and monolayer MoS2" In 2019 IEEE Electron Devices Technology and Manufacturing Conference (EDTM 2019), Singapore, March 12th to 15th, 2019.
2018
84. Jiefang Deng, Xuanyao Fong, Venkata Pavan Kumar Miriyala, Panpan Zhang, and Gengchiau Liang, “Layout-aware optimization of an electric-field-controlled three-terminal pMTJ in the absence of external magnetic field,” MRAM poster session 64th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-5, 2018.
83. Lingfei Wang, Lin Wang, Kah-Wee Ang, Aaron Thean, Gengchiau Liang, “A Surface Potential- and Physics- Based Compact Model for 2D Polycrystalline -MoS2 FET with Resistive Switching Behavior in Neuromorphic Computing,” 64th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-5, 2018.
82. Venkata Pavan Kumar Miriyala, Xuanyao Fong, and Gengchiau Liang, "FANTASI: A Novel Devices-to-Circuits Simulation Framework for Fast Estimation of Write Error Rates in Spintronics", 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Austin, TX, pp. 53-57, 2018.
81. Deng J., Fong X., Zhang P., and Liang G. Layout-awareness of Three-terminal pMTJ Switched by Electric Field without External Magnetic Field, 2018 IEEE Silicon Nanoelectronics Workshop, VLSI in Honolulu, HI, USA.
80. Cheng-Yi Huang, Wei-Feng Tsai, Mohammad Sadi, Gaurav Gupta, Tay-Rong Chang, Chuang-Han Hsu, Horng-Tay Jeng, Geng-Chiau Liang, Hsin Lin, Arun Bansil, “Gate controllable spin filteration and spin separation in transition-metaldichalcogenide monolayers for room temperature applications,” Bulletin of the American Physical Society, APS meeting 2018.
2017
79. L. Wang, Y. Li, X. Feng, K.-W. Ang, X. Gong, A. Thean, and G. Liang*, "A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration," 63rd IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-6, 2017.
78. Jiefang Deng, Gaurav Gupta, and Gengchiau Liang*, “Voltage-controlled magnetization switching in elliptical pMTJ,” 2017 International Conference on Solid State Devices and Materials, September 19-22 Sendai Japan.
77. Xiaoyi Zhang and Gengchiau Liang*, “Performance Evaluation of Ferroelectric MOSFETs based on Gibbs Free Energy,” International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2017 September 7-9 Kamakura, Japan.
76. Annie Kumar, Shuh-Ying Lee, Sachin Yadav, Kian Hua Tan, Wan Khai Loke, Daosheng Li, Satrio Wicaksono, Gengchiau Liang, Soon-Fatt Yoon, Xiao Gong, Dimitri Antoniadis3, and Yee-Chia Yeo, “Enabling Low Power and High Speed OEICs: First Monolithic Integration of InGaAs n-FETs and GaAs/AlGaAs Lasers on Si Substrate” 2017 VLSI.
75. Ying Wu, Sheng Luo, Wei Wang, Saeid Masudy-Panah, Dian Lei, Xiao Gong, Gengchiau Liang, and Yee-Chia Yeo, “Record Low Specific Contact Resistivity (1.2Å~10-9 Ω-cm2) for P-type Semiconductors: Incorporation of Sn into Ge and In-Situ Ga Doping,” 2017 VLSI
74. Yuan Dong, Wei Wang, Shengqiang Xu, Dian Lei, Xiao Gong, Shuh Ying Lee, Wan Khai Loke, Soon Fatt Yoon, Gengchiau Liang, Yee Chia Yeo, “Ge 0.9 Sn 0.1 multiple-quantum-well pin photodiodes for optical communications at 2 μm” Optical Fiber Communication Conference, 2017.
73. Ming-Chien Hsu, Liang-Zi Yao, Seng Ghee Tan, Mansoor Jalil, Gengchiau Liang, Multi-orbital induced effective Rashba spin texture-the inequivalent contribution,” American Physical Society march meeting, 2017.
72. Sheng Luo, Kainlu Low, Xiaoyi Zhang, Qianyu Zhao, Hsin Lin, and Gengchiau Liang*, “A Computational Study of Fundamentals and Design Considerations for Vertical Tunneling Field-Effect Transistor”, Electron Devices Technology and Manufacturing Conference 2017 (EDTM2017), Feb 28-Mar 2, 2017, Toyama International Conference Center, Toyama, Japan.
2016
71. Zhifeng Zhu, Gaurav Gupta, Hsin Lin, Gengchiau Liang*, “Wrangling Spin-Orbit-Torque Voltage-Controlled-Oscillator,” 2016 International Conference on Solid State Devices and Materials, SSDM.
70. Venkata Pavan Kumar Miriyala, Mansoor Bin Abdul Jalil1, and Gengchiau Liang*, “Spin Hall Effect-based Asynchronous Nanomagnetic Logic Devices,” 2016 International Conference on Solid State Devices and Materials, SSDM.
69. WANG*, W, Y DONG, SY Lee, WK Loke, X GONG, SF Yoon, Gengchiau LIANG and Y C Yeo, "Germanium-Tin Heterojunction Phototransistor: Towards High-Efficiency". 2016 Symposium on VLSI Technology (2016). New Jersey: IEEE. (2016 Symposium on VLSI Technology, 13 - 16 Jun 2016, Hilton Hotel, Honolulu, Honolulu, United States)(Technology on VLSI Symposium is one of the two top conferences in semiconductor devices.).
68. Xiaoyi Zhang, Yee-Chia Yeo, and Gengchiau Liang* “Performance Evaluation of Nanoscale FETs Based on Full-Band Complex Bandstructure and Real Space Poisson Solver,” SNW 2016, IEEE SILICON NANOELECTRONICS WORKSHOP 2016 June 12-13, 2016, Hilton Hotel, Honolulu, USA.
67. YESILYURT, C, S. G. Tan, Gengchiau LIANG and M B A Jalil, "Perfect valley filter in strained graphene with single barrier region". Abstracts of the 13th Joint MMM-Intermag Conference (2016): FT-02. San Diego: AIP and IEEE. (13th Joint MMM-Intermag Conference (2016), 11 - 15 Jan 2016, Hilton San Diego Bayfront Hotel, San Diego, CA, United States).
2015
66. Kai-Tak Lam, Sheng Luo, Baokai Wang, Hans Hsu, Arun Bansil, Hsin Lin and Gengchiau Liang*, “Effects of interlayer potential in van der Waals layered black phosphorus field-effect devices,” 2015 IEEE International Electron Devices Meeting (IEDM), to be held at Washington Hilton, 1919 Connecticut Ave., NW, Washington, DC USA, December 6-9, 2015.
65. Sachin Yadav, Kian-Hua Tan, Annie, Kian Hui Goh, Sujith Subramanian, Kian Lu Low, Nanyan Chen, Bowen Jia, Soon-Fatt Yoon, Gengchiau Liang, Xiao Gong1, Yee-Chia Yeo, “First Monolithic Integration of Ge P-FETs and InAs N-FETs on Silicon Substrate: Sub-120 nm III-V Buffer, Sub-5 nm Ultra-thin Body, Common Raised S/D, and Gate Stack Modules,” 2015 IEEE International Electron Devices Meeting (IEDM), to be held at Washington Hilton, 1919 Connecticut Ave., NW, Washington, DC USA, December 6-9, 2015.
64. Yuan Dong, Wei Wang, Shuh Ying Lee, Dian Lei, Xiao Gong, Wan Khai Loke, Soon-Fatt Yoon, Gengchiau Liang, and Yee- Chia Yeo, “Avalanche Photodiode featuring Germanium-Tin Multiple Quantum Wells on Silicon: Extending Photodetection to Wavelengths of 2 μm and Beyond,” 2015 IEEE International Electron Devices Meeting (IEDM), to be held at Washington Hilton, 1919 Connecticut Ave., NW, Washington, DC USA, December 6-9, 2015.
63. Kian-Hui Goh, Kian-Hua Tan, Sachin Yadav, Soon-Fatt Yoon, Gengchiau Liang, Xiao Gong, Yee-Chia Yeo, “Gate-All- Around CMOS (InAs n-FET and GaSb p-FET) based on Vertically-Stacked Nanowires on a Si Platform, Enabled by Extremely-Thin Buffer Layer Technology and Common Gate Stack and Contact Modules,” 2015 IEEE International Electron Devices Meeting (IEDM), to be held at Washington Hilton, 1919 Connecticut Ave., NW, Washington, DC USA, December 6-9, 2015.
62. Gaurav Gupta, Gengchiau Liang* and Mansoor Bin Abdul Jalil, “Anti-Damping Torque Engineering in Trilayer Spin-Hall System,” 2015 International Conference on Solid State Devices and Materials (SSDM 2015), Sapporo Convention Center Sapporo, Japan, Sept. 27-30, 2015.
61. Y. Dong, W. Wang, D. Lei, X. Gong, Q. Zhou, S. Y. Lee, W. K. Loke, S.-F. Yoon, G. Liang, and Y.-C. Yeo, "Germanium-tin on Silicon p-i-n Photodiode with Low Dark Current due to Sidewall Surface Passivation," Optical Fiber Communication Conference (OFC), Los Angeles CA, USA, Mar. 22-26, 2015.
2014
60. Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang, “Band-Alignment Induced Current Modulation in Bi2Se3 Topological Insulator,” 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba International Congress Center, Tsukuba, Ibaraki, Japan, Sept. 8-11, 2014.
59. Mohammad Abdullah Sadi, Gaurav Gupta, and Gengchiau Liang, “Effect of Phase Inversion on Quantum Transport in Group IV Two-Dimensional U-shape Device,” 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Tsukuba International Congress Center, Tsukuba, Ibaraki, Japan, Sept. 8-11, 2014.
58. K. L. Low, Y.-C. Yeo, G. Liang, "Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond," 72nd Device Research Conference (DRC), Santa Barbara CA, USA, Jun. 22 - 25, 2014.
57. Y. Dong, W. Wang, X. Xu, X. Gong, D. Lei, Q. Zhou, Z. Xu, S.-F. Yoon, G. Liang, and Y.-C. Yeo, "Germanium-tin on silicon avalanche photodiode for short-wave infrared imaging," Symp. on VLSI Tech. 2014, Honolulu HI, USA, Jun. 9 - 12, 2014.
2013
56. K. H. Goh, Y. Guo, X. Gong, G.-C. Liang, and Y.-C. Yeo, "Near ballistic sub-7 nm In0.53Ga0.47As junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure," IEEE International Electron Device Meeting (IEDM) 2013, Washington, DC USA, Dec. 9 - 11, 2013.
55. Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang, “Is Sub-10 nanometer thick 3D Topological Insulator good for local electrical interconnects?” 2013 IEEE International Electron Devices Meeting (IEDM), to be held at Washington Hilton, 1919 Connecticut Ave., NW, Washington, DC USA, December 9-11, 2013.
54. Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang, 2013 International Conference on Solid State Devices and Materials (SSDM 2013) September 24-27, 2013, Hilton Fukuoka Sea Hawk, Fukuoka, Japan.
2012
53. Kai-Tak Lam, Yee-Chia Yeo, and Gengchiau Liang, “Performance Comparison of III-V MOSFETs with Source Filter for Electron Energy” 2012 IEEE International Electron Devices Meeting (IEDM), to be held at the Hilton San Francisco Union Square, San Francisco, CA, December 10-12, 2012.
52. Gaurav Gupta, Mansoor Bin Abdul Jalil and Gengchiau Liang, “Comparison of Electro-Optic Effect based Graphene Transistors,” 2012 International Conference on Solid State Devices and Materials (SSDM 2012) September 25-27, 2012, Kyoto International Conference Center, Kyoto, Japan.
51. Kai-Tak Lam, Vijayashree Parsi Sreenivas, Gengchiau Liang, “High Frequency Performance of Graphene Nanoribbon TFETs with Phonon Scattering,” 15th International Workshop on Computational Electronics, May 22-25, 2012, University of Wisconsin, Madison, USA.
50. Wen Huang and Gengchiau Liang, “Effects of vacancy and magnetic field on thermoelectric properties of straight and kinked graphene nanoribbons,” 15th International Workshop on Computational Electronics, May 22-25, 2012, University of Wisconsin, Madison, USA.
49. Eduardo C. Cuansing and Gengchiau Liang, “ Quantum transport in nano-devices with a time-varying switch and a timedependent gate,” 15th International Workshop on Computational Electronics, May 22-25, 2012, University of Wisconsin, Madison, USA.
2011
48. Vijayashree Parsi Sreenivas, Kai Tak Lam* and Liang Gengchiau, “RF Performance of Graphene Nano-Ribbon MOSFET vs. TFET,” 2011 International Conference on Solid State Devices and Materials, Aichi Industry & Labor center (WINC AICHI), Nagoya, Japan, Sep. 28-30, 2011.
47. Kai-Tak Lam, Sai-Kong Chin, and Gengchiau Liang, “Device Performance of Graphene Nanoribbon MOSFET and Tunneling FET with Phonon Scattering: A Computation Study,” 2011 International Conference on Solid State Devices and Materials, Aichi Industry & Labor center (WINC AICHI), Nagoya, Japan, Sep. 28-30, 2011.
46. Kai-Tak Lam, Yunhao Lu, Yuan Ping Feng and Gengchiau Liang, “Atomic Stability and Electronic Structure of Cx(BN)y Monolayer” The 6th Conference of the Asian Consortium on Computational Materials Science (ACCMS-6), Matrix @Biopolis, Singapore, 6–9 September 2011.
45. Minggang Zeng, Yuanping Feng and Gengchiau Liang,” Graphene-based Spin Caloritronics,” The 6th Conference of the Asian Consortium on Computational Materials Science (ACCMS-6), Matrix @ Biopolis, Singapore, 6–9 September 2011.
44. Haixia Da, Yuan Ping Feng and Gengchaiu Liang, “Transition-Metal-Atom-Embedded Graphane and Its Spintronic Device Applications,” The 6th Conference of the Asian Consortium on Computational Materials Science (ACCMS-6), Matrix @Biopolis, Singapore, 6–9 September 2011.
43. K.-T. Lam, Yan-Zheng Peck, Zhi-Hean Lim, and Gengchiau Liang, “Performance Comparison of Armchair-Edged and Nitrogen-Doped Zigzag-Edged Graphene Nanoribbon Schottky Barrier Field-Effect Transistors,” the 4th 2011 IEEE International NanoElectronics Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan, June 21-24, 2011.
42. Gengchiau Liang, K.-T. Lam, S. K. Chin, and D.W. Seah, “Quantum Transport Simulations of Graphene Based Devices Using Dirac Hamiltonian calibrated with π-orbital Tight Binding Approach,” the 4th 2011 IEEE International NanoElectronics Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan, June 21-24, 2011.
41. H. Da, K.-T. Lam, G. S. Samudra, S. K. Chin, and Gengchiau Liang, “Source/Drain Doping Influence on Heterojunction Graphene Nanoribbon Tunneling Field Effect Transistors,” the 4th 2011 IEEE International NanoElectronics Conference (INEC) in Chang Gung University, Kweishan, Taoyuan, Taiwan, June 21-24, 2011.
2010
40. Wen Huang, Chee Shin Koong, and Gengchiau Liang, "Theoretical Study on Geometry and Temperature Effects of Thermoelectric Properties of Si and Ge Nanowires," International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), InterContinental, Pudong, Shanghai, China, Nov. 1-4, 2010.
39. Gengchiau Liang, S.-K. Chin, D. W. Seah, K.-T. Lam, and Ganesh S. Samudra, “Doping and Temperature Effects on Graphene Nanoribbon Tunneling Field-Effect-Transistors,” International Conference on Solid-State and Integrated Circuit Technology (icsict2010), InterContinental, Pudong, Shanghai, China, Nov. 1-4, 2010.
38. Kai-Tak Lam, Marie Stephen Leo, Chengkuo Lee, and Gengchiau Liang, “Comparison of bilayer GNR NEMS devices based on attractive and repulsive force actuators,” 14th International Workshop on Computational Electronics (IWCE 2010) Pisa, Italy, October 27th-29th, 2010.
37. W. Huang, and G. Liang, “Size and Chirality Dependence on Thermoelectric Properties of Graphene Nanoribbons,” 2010 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 22-24, 2010.
36. S. B. Kumar, T. Fujita, and G. Liang, “Graphene based transversal-gated field effect transistor due to band gap modulation,” 2010 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 22-24, 2010.
35. H. Da, K.-T. Lam, S. K. Chin, G. S. Samudra, Y.-C. Yeo, and G. Liang, "Performance evaluation of graphene nanoribbon heterojunction tunneling field effect transistors with various source/drain doping concentration and heterojunction structure," 2010 International Conference on Solid State Devices and Materials, Tokyo, Japan, Sep. 22-24, 2010.
34. Kai-Tak Lam, Dawei Seah, S. K. Chin, S. Bala Kumar, G. Samudra, Yee-Chia Yeo, and Gengchiau Liang, “A Computational Study on the Device Performance of Graphene Nanoribbon Heterojunction Tunneling FETs,” Device Research Conference 2010, June 21-23, 2010, University of Notre Dame, South Bend, IN, USA.
33. S. Bala Kumar, Gengchiau Liang, S. G. Tan, and M. B. A. Jalil, “High magnetoresistive effect in armchair graphene nanoribbon utilizing n=0 Landau Level,” THE 11TH JOINT MMM–INTERMAG CONFERENCE, Washington, DC, January 18–22, 2010.
2009
32. Kai-tak Lam and Gengchiau Liang, “A Computational Evaluation of the Designs of a Novel Nanoelectromechanical Switch Based on Bilayer Graphene Nanoribbon” 2009 IEEE International Electron Devices Meeting (IEDM), to be held at the Hilton Baltimore, Baltimore, MD, December 7-9, 2009.
31. Kai-Tak Lam, Sundaram Pillay Bala Kumar, Sai Kong Chin, Seah Da Wei1 and Gengchiau Liang, “Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors,” 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
30. Wen Huang, Chee Shin Koong, and Gengchiau Liang, “Theoretical Study on Thermoelectric Properties of Ge and Si Nanowires,” 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
29. Sharjeel Bin Khalid, Kai-Tak Lam and Gengchiau Liang, ”Computational Study of Edge Roughness Effect on the Device Performance of Graphene Nanoribbon Resonant Tunneling Diodes,” 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
28. Chee Shin Koong, Ganesh Samudra, and Gengchiau Liang, “Shape Effects on the Performance of Si and Ge Nanowire FETs Based on Size Dependent Bandstructure,” 2009 International Conference on Solid State Devices and Materials (SSDM 2009), Sendai Kokusai Hotel, Miyagi, Japan, October 7-9, 2009.
27. Kai-Tak Lam, Chengkuo Lee and Gengchiau Liang, “Computational Study of Nanoelectromechanical Device Using Bilayer Graphene Nanoribbon,”International Conference on Materials for Advanced Technologies (ICMAT) 2009, June 28- July 3, 2009, Singapore.
26. Kai-Tak Lam, Yan-Zheng Peck, Chengkuo Lee and Gengchiau Liang, ”Graphene Nanoribbon Schottky-Barrier Field Effect Transistor and its Application as a Nanoelectromechanical Device,” IEEE 9th Nanotechnology conference, (IEEE NANO 2009), July 26-30, 2009, Genoa, Italy.
25. Kai-Tak Lam and Gengchiau Liang, “Computational Study on the Performance of Monolayer and Bilayer Graphene Nanoribbon devices,” 13th International Workshop on Computational Electronics (IWCE), May 27-29, 2009 Bejing, China.
24. Gengchiau Liang, Hansen Teong, and Kai-Tak Lam, “Computational study of Graphene Nanoribbon Resonant Tunneling,” 13th International Workshop on Computational Electronics (IWCE), May 27-29, 2009 Bejing, China.
23. Zuan-Yi Leong, Kaitak Lam, and Gengchiau Liang, “Device Performance of Graphene Nanoribbon Field Effect Transistors with Edge Roughness Effects: A Computational Study,” 13th International Workshop on Computational Electronics (IWCE), May 27-29, 2009 Bejing, China.
2008
22. +Kai-Tak Lam and G.-C. Liang, “A first-principals study on edge doping of armchair graphene nanoribbon,” International IEEE International Nanoelectronics Conference 2008, 24-27 March 2008, Shanghai, China.
21. G.-C. Liang, “Width Effects in Ballistic Graphene Nanoribbon FETs,” IEEE International Nanoelectronics Conference 2008, 24-27 March 2008, Shanghai, China.
20. Kai-Tak Lam and G.-C. Liang, Electronic Properties of Edge-doped Armchair Graphene Nanoribbon: an ab initio Approach, MRS 2008 spring meeting, March 24 – 28, Moscone West and San Francisco Marriott, USA.
19. G.-C. Liang, “Theoretical Study of Graphene Nanoribbon (GNR) FETs,” 2nd International Conference on New Diamond and Nano Carbons (NDNC2008), May 26-29, Taipei, Taiwan.
18. Kai-Tak Lam and G.-C. Liang, “An ab initio investigation of energy bandgap of monolayer and bilayer graphene nanoribbon based on different basis sets,” IEEE nano 2008, TX USA Aug. 18-21, 2008.
17. Gengchiau Liang, Hansen Teong, Kaitak Lam, Neophytos Neophytou, and Dmitri E. Nikonov, “Graphene Nanoribbon Transistors and Resonant Tunneling Diodes,” 2008 International Conference on Solid-State Devices and Materials, Ibaraki, Japan, Sep. 23 - 26, 2008.
16. Chee Shin Koong, Ganesh Samudra, Gengchiau Liang, “Investigate the Effects of Channel Materials & Channel Orientations on the Performance of Nanowire FETs,” 2008 International Conference on Solid-State Devices and Materials, Ibaraki, Japan, Sep. 23 - 26, 2008.
15. J. W. Peng, S. J. Lee, G. C. Albert Liang, N. Singh, C. M. Ng, G. Q. Lo and D. L. Kwong, ”Gate-All-Around 4-nm Silicon Nanowire Schottky Barrier MOSFET with 1-D NiSi Source/Drain” 2008 International Conference on Solid-State Devices and Materials, Ibaraki, Japan, Sep. 23 - 26, 2008.
14. Kaitak Lam and Gengchiau Liang, “A First Principle Study of Bilayer Graphene Nanoribbon Devices,” The 2008 Asian Conference on Nanoscience and Nanotechnology (AsiaNANO2008), Nov. 3-Nov. 7, 2008, Singapore.
13. Gengchiau Liang, Hansen, Teong and Kaitak Lam, “Possible Electronic Device Applications of Graphene Nanoribbons,” The 2008 Asian Conference on Nanoscience and Nanotechnology (AsiaNANO2008), Nov. 3-Nov. 7, 2008, Singapore.
2007
12. G.-C. Liang, N. Neophytos, M. Lundstrom and D. Nikonov, “Contact effects on Graphene Nanoribbon Field-Effect Transistors,” IEEE nano 2007, Hong Kong China 2007.
11. G.-C. Liang, “Geometry effect of Si Nanowire MOSFETs”, 2007 Silicon Nanoelectronics Workshop, Kyoto Japan 2007.
10. +G.-C. Liang, N. Neophytos, M. Lundstrom, and D. Nikonov, “Simualtion study of the Double-Gate Graphene Nanoribbon MOSFETs,” 12th International Workshop on C 12th International Workshop on Computational Electronics (IWCE-12), Amherst, USA, Oct. 8-10, 2007.
9. +G.-C. Liang, “Structure effect of all-gate-around Si Nanowire MOSFETs”, 2007 IEEE Conference on Electron Devices and Solid-State Circuits, Taiwan, December 20-22, 2007.
8. +G.-C. Liang, N. Neophytos, D. Nikonov, and M. Lundstrom “Theoretical study of Graphene Nanoribbon Field-Effect Transistors ,” Nano tech 2007, Santa Clara, California, U.S.A 2007.
2006 & before
7. G.-C. Liang, D. Kienle, S. Patil, S. Khare, A. W. Ghosh, and J. Wang, “Impact of Structure Relaxation on Performance of Silicon Nanowire FETs”, 2006 IEEE SILICON NANOELECTRONICS WORKSHOP, Hawaii USA, 2006.
6. A. W. Ghosh, B. Muralidharan, G-C. Liang, S. Datta, “Towards a Theory of Single Molecule Conduction, ” IEEE Nano 2006, Cincinnati USA 2006.
5. G.-C. Liang, A. Ghosh, T. Rakshit and S. Datta, “Quantum Simulation of Current through Molecules on Silicon”, Workshop on Molecular Conduction, Northwestern University, IL, US., June 2004.
4. A.W. Ghosh, G.-C. Liang, T. Rakshit, D. Kienle, and S. Datta, “Molecular Elements on Silicon Substrates: Modeling Issues and Device Prospect”, IEEE nano 2004, Munich, Germany, Aug. 2004.
3. G.-C. Liang, A. Ghosh, T. Rakshit and S. Datta, “Hybrid-basis modeling of electron transport through molecules on Silicon”, IEEE, International Workshop on Computational Electronics 10, West Lafayette, US., Aug 2004.
2. G.-C. Liang, A. Ghosh, M. Paulsson, and S. Datta, “Hybrid-basis modeling of transport through molecule-semiconductor interfaces”. Trends in Nanotechnology (TNT), Salamanca, Spain, Sep. 2003.
1. G.-C. Liang, A. Ghosh, T. Rakshit and S. Datta, “Hybrid-Basis Modeling of Transport Through Silicon-Based Molecular Devices” 46th Annual Electronic Material Conference, Notre Dame, May 2003.
Invited Talks
a. Conference
21.Ching-Tzu Chen, Utkarsh Bajpai1, Nicholas A. Lanzillo, Chuang-Han Hsu, Hsin Lin, and Gengchiau Liang, “Topological Semimetals for Scaled BEOL Interconnect Beyond Cu”, 66th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, 2020 (Invited talk).
20. Gengchiau Liang, “Electron Transport Behaviors in 2D materials and their device performance of FETs,” The International Union of Materials Research Society – International Conference on Electronic Materials 2018, Daejeon, South Korea from August 19 to 24, 2018.
19. Gengchiau Liang, “Real-space modeling design and challenge of Negative Capacitance FET,” Workshop on Compact Modeling at the Nanotech 2018, May 15, 2018, Anaheim, California, USA.
18. Gengchiau Liang, “Electron Transport Behaviors in 2D Materials and Their Potential Applications in FETs—from Theoretical Perspective,” IEEE NEMS 2018, Singapore.
17. Gengchiau Liang, “Device physics, design and challenge of Negative Capacitance FET,” 2018 VLSI-TSA Symposium,Taiwan.
16. Gengchiau Liang, “Device Performance of 2D Layered Material Transistors and Their Challenges: A Theoretical Study”, 2nd Electron Devices Technology and Manufacturing (EDTM) Conference 2018, Japan.
15.Gengchiau Liang, “Novel Spin Oscillators” Tohoku-SG-Spin Workshop on Spintronics, Tohoku University, Japan, Nov. 2017.
14. Xiao Gong, Sachin Yadav, Annie, Shuh-Ying Lee, Kian Hua Tan, Wan Khai Loke, Kian Hui Goh, Bowen Jia, Satrio Wicaksono, Soon-Fatt Yoon, Gengchiau Liang, and Yee-Chia Yeo, “Heterogeneous Integration of III-V and Ge-based Devices on the Si Platform,” MRS Spring meeting 2018, USA.
13. Gengchiau Liang, “The future FETs: Tunneling, Negative capacitance, or 2D layer materials?” 2016 IEDMS International Electron Devices and Materials Symposium, November 24-25, 2016, National Taiwan Normal University, Taipei, Taiwan.
12. GONG, X, S, K H GOH, KH Tan, A, K L LOW, BW Jia, SF Yoon, Gengchiau LIANG and Y C Yeo, "Enabling Heterointegration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique". 2016 International Conference on Solid State Devices and Materials (Invited paper).
11. GONG, X, S , K H GOH, KH Tan, A, K L LOW, BW Jia, SF Yoon, Gengchiau LIANG and Y C Yeo, "Enabling Heterointegration of III-V and Ge-based Transistors on Silicon with Ultra-thin Buffers formed by Interfacial Misfit Technique". The Electrochemical Society Meetng 2016 (Invited paper).
10. Gengchiau Liang, “Quantum Transport in 2D Group-IV monolayers and TIs and their Potential Applications,” The 4th International Conference of Asian Union of Magnetics Societies (IcAUMS 2016), Tainan , Taiwan from Aug. 1 to 5, 2016.
9. Gengchiau Liang, “Effects of Van Der Waals Interaction in 2D Layered Material FETs and Their Device Performance Benchmark,” 229th ECS meeting, Meeting of The Electrochemical Society, The Electrochemical Society, May 29-June 2, 2016, San Diego, CA.
8. Gengchiau Liang, Gaurav, “Spin Transport in Two-Dimensional Group-IV Materials,” 8th international conference in materials and advanced technologies of the materials research society of Singapore, ICMAT, 2015 SUNTEC, Singapore, June 28-July 3, 2015.
7. Gaurav, and Gengchiau Liang, “Quantum Transport in Two-Dimensional Group-IV monolayers and Topological Insulators,” Korean, March 23-25, 1st Annual World Congress of Smart Materials-2015 (WCSM-2015) in March 23-25, 2015, Busan, Republic of Korea.
6. Gengchiau Liang, “Computational study of electronic and spintronic device performance based 2D layered materials beyond graphene,” The biennial international conference on the Study of Matter at Extreme Conditions, March 8-15, 2015, (SMEC-2015), Miami, USA.
5. Gengchiau Liang, “Electrical and thermoelectric performance of 2D layered materials: atomic simulation study,” 2014 ECS and SMEQ Joint International Meeting, 226th Meeting of The Electrochemical Society, October 5-10, 2014, Cancun, Mexico.
4. Gengchiau Liang, “Electronic properties of 2D related materials and their applications,” IEEE ISNE2014, the International Symposium on Next-Generation Electronics, May 7 to May 10, 2014 at Chang Gung University in Tao-Yuan, Taiwan.
3. Gengchiau Liang, “Carrier transport in 2D layer materials and their electronic applications,” 2D materials beyond graphene Workshop, National University of Singapore, Singapore, December 15-17, 2013.
2. Gengchiau Liang, “Large magnetoresistance effects and spin caloritronics in graphene nanoribbons,” WUN-SPIN 2012, 23 JULY 2012 -25 JULY 2012, THE UNIVERSITY OF SYDNEY, SYDNEY, AUSTRALIA.
1. Gengchiau Liang, “Possible Electronic Device Applications of Graphene Nanoribbons” ICCE-19 19th INTERNATIONAL CONFERENCE ON COMPOSITES or NANO ENGINEERING July 24-30, 2011, Shanghai, China.
b. Seminar
16. Gengchiau Liang, “Electron Transport Behaviors in 2D Materials and Their Potential Applications in FETs—from Theoretical Perspective,” Taiwan Semiconductor Manufacturing Company, TSMC, January 3rd 2018.
15. Gengchiau Liang, “The Ultra-Low Power Consumption Electronic Devices—Nanoelectronics vs Spintronic—from Theoretical Perspective,” King Abdullah University of Science and Technology, KAUST, Oct 25 2017.
14. Gengchiau Liang, “Future Electronics Based On 2D Materials And Their Electronic Applications: A Theoretical Perspective” National Chiao Tung University (invited talk), HsingChu, Taiwan, December 6, 2013.
13. Gengchiau Liang, “Future Electronics Based On 2D Materials And Their Electronic Applications: A Theoretical Perspective” National Central University (invited talk), Taoyuan County, Taiwan, December 4, 2013.
12. Gengchiau Liang, “Future Electronics Based On 2D Materials And Their Electronic Applications: A Theoretical Perspective” National Taiwan University (invited talk), July 13, 2013.
11. Gengchiau Liang, “Graphene-based Nano-devices nano-devices—Future of Nanoelectronic Device” Fudan University, Shanghai, China, (invited talk), November 8 2010.
10. Gengchiau Liang, “Fundamentals of Graphene Nanoribbons and their Possible Electronic Device Applications” Zhejing University, HangZhou, China, (invited talk), November 5 2010.
9. G.-C. Liang, “Graphene-based Nano-devices nano-devices, “Future of Nanoelectronic Devices”” National Tsinghua University, Hsingchu Taiwan, (invited talk), May 2010.
8. G.-C. Liang, “Graphene related nano-devices,” National Taiwan Normal University, Taipei Taiwan, (invited talk), June 2008.
7. G.-C. Liang, “Graphene Nano-Ribbon (GNR) devices,” National Taiwan University of Science and Technology, Taipei Taiwan, December 2007.
6. *G.-C. Liang, “Graphene related nano-devices,” Institute of Atomic and Molecular Science, Academia Sinica, Taipei Taiwan, December 2007.
5. G.-C. Liang, “Towards Nanoscale Devices Fundamental Physics & Device Applications,” invited talk in Research Center for Applied Sciences, Academic Sinica, Taipei, 2006.
4. G.-C. Liang, “ Electron transport through Si (100) surface and Si Nanowires,” invited talk in Institute of High Performance Computing (IHPC), Signapore, 2006.
3. G.-C. Liang, “Towards Nanoscale Devices Fundamental Physics & Device Applications,” invited talk in National University of Sigapore, Signapore, 2006.
2. G.-C. Liang, “Molecular Electronic Devices: its applications and future,” invited talk in National Chiao Tung University, Hsinchu Taiwan, 2005.
1. G.-C. Liang, “Molecular Electronic Devices: Physics & Applications,” invited talk in National Tsing Hua University, Hsinchu Taiwan, 2005.
Books/Book Chapters
4. Wen Huang, Argo Nurbawono, Minggang Zeng, Gaurav Gupta, Gengchiau Liang “26 Electronic Structure of Graphene-Based Materials and Their Carrier Transport Properties” 2016 by Taylor & Francis Group, LLC
3. Gaurav Gupta, Minggang Zeng, Argo Nurbawono, Wen Huang, Gengchiau Liang, “19 Applications of Graphene-Based Materials in Electronic Devices” 2016 by Taylor & Francis Group, LLC
2. Kaitak Lam andGengchiau Liang, “Electronic Structure of Monolayer and Bilayer Graphene Nanoribbons and their Device Application: A Computational Study” Springer (invited)
1. Darren Koong andGengchiau Liang, “Effects of Channel Materials & Channel Orientations and Dimensional on the Performance of Nanowire FETs,” (Book Chapter) Solid State Circuits Technologies, Intech, 2010, ISBN 978-953-307-045-2.